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Development of Empirical Potential Profile Model for Unusual Energy Separation of Subbands in Indium-adsorbed Si(111) Inversion Layer

Development of Empirical Potential Profile Model for Unusual Energy Separation of Subbands in Indium-adsorbed Si(111) Inversion Layer

Nur Idayu Binti Ayob

生駒 : 奈良先端科学技術大学院大学, 2015.9

Thesis / Diss.

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Total: 2
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R012267

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  • Abstract

R012268

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Publication year

2015

Alternative title

Si(111) 反転層中のサブバンドの異常なエネルギー準位間隔に対する経験的な反転層形状モデルの開発

Series title

奈良先端科学技術大学院大学物質創成科学研究科博士論文 ; 2015年9月

Note

学位記番号: 博第1294号

報告番号: 甲第1294号

学位授与年月日: 2015/09/25

学位の種類: 博士(工学)

学生番号: 1241016

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

Ayob, Nur Idayu Binti

Subject

Band bending

Subband dispersion

ARPES

Inversion layer

Dopant

Semiconductor

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