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Relationship between Electrical Characteristics and Crystallographic Properties in Pseudo-Single-Crystal Silicon Thin-Film Transistors Fabricated by Phase-Modulated Excimer Laser Annealing

Relationship between Electrical Characteristics and Crystallographic Properties in Pseudo-Single-Crystal Silicon Thin-Film Transistors Fabricated by Phase-Modulated Excimer Laser Annealing

三谷昌弘

生駒 : 奈良先端科学技術大学院大学, 2014.3

Thesis / Diss.

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Total: 2
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要旨
No. Printing year Location Call Number Material ID Circulation class Status Waiting

1

  • Abstract

R010712

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要約
要約
No. Printing year Location Call Number Material ID Circulation class Status Waiting

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R010726

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Publication year

2014

Alternative title

位相変調エキシマレーザーアニーリングで作製した擬似単結晶シリコン薄膜トランジスタの電気的特性と結晶学的特性の関係の研究

Series title

奈良先端科学技術大学院大学物質創成科学研究科博士論文 ; 2014年3月

Note

学位記番号: 博第1221号

報告番号: 甲第1221号

学位授与年月日: 2014/03/24

学位の種類: 博士(工学)

学生番号: 1141019

博士論文公表延期中のため、本文に代えて要約を公表中

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

三谷, 昌弘 (ミタニ, マサヒロ)

Subject

poly-Si

thin film transistor

excimer laser annealing

high performance

surface orientation

uniformity

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