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Hydrogen adsorption and desorption on Si(111)7×7 between 290 K and 770 K studied by scanning tunneling microscopy in real time

Hydrogen adsorption and desorption on Si(111)7×7 between 290 K and 770 K studied by scanning tunneling microscopy in real time

Henning Neddermeyer

生駒 : 奈良先端科学技術大学院大学, 2001.1

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Total: 1
No. Printing year Location Call Number Material ID Circulation class Status Waiting

1

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V001829

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Publication year

2001

G/SMD

videorecording (v-)

Form

電子化映像資料(41分2秒)

Series title

NAIST International Symposium on Surface Electronic and Atomic Phenomena ; 2001

Note

講演者所属: Martin Luther University, Germany

講演日: 平成13年1月15日

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

Neddermeyer, Henning

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