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Bilayer High-k Al2O3 and HfO2 Gate Insulator for High Performance a-IGZO Thin Film Transistor

Bilayer High-k Al2O3 and HfO2 Gate Insulator for High Performance a-IGZO Thin Film Transistor

Dian Budiarti Kastian

生駒 : 奈良先端科学技術大学院大学, 2023.9

Thesis / Diss.

Volume No.

Total: 1
No. Printing year Location Call Number Material ID Circulation class Status Waiting

1

R018594

Details

Publication year

2023

Alternative title

a-IGZO薄膜トランジスタの高性能化に向けた高誘電率Al2O3とHfO2の二層ゲート絶縁膜

Series title

奈良先端科学技術大学院大学先端科学技術研究科修士論文 ; 2023年9月

Note

学位記番号: 修第9354号

学位授与年月日: 2023/09/30

学位の種類: 修士(工学)

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

Dian Budiarti Kastian

Subject

Thin Film Transistor

Bilayer High-k gate insulator

Al2O3

HfO2

a-IGZO