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Analysis of Low Temperature Solution-processed High-k Gate Insulator for Amorphous Oxide Thin-film Transistors

Analysis of Low Temperature Solution-processed High-k Gate Insulator for Amorphous Oxide Thin-film Transistors

Ployrung Kesorn

生駒 : 奈良先端科学技術大学院大学, 2020.9

Thesis / Diss.

Volume No.

Total: 1
No. Printing year Location Call Number Material ID Circulation class Status Waiting

1

R016654

Details

Publication year

2020

Alternative title

非晶質酸化物薄膜トランジスタに向けた低温形成high-kゲート絶縁膜の解析

Series title

奈良先端科学技術大学院大学先端科学技術研究科修士論文 ; 2020年9月

Note

学位記番号: 修第8355号

学位授与年月日: 2020/09/30

学位の種類: 修士(工学)

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

Kesorn, Ployrung

Subject

Thin-film transistor

Nanocomposite gate insulator

High-k

Solution processed

In-Ga-Zn-O

Flexible display