Measurement of BTI-induced Threshold Voltage Shift for Packaged SiC Power MOSFETs under Actual Switching Operation

Measurement of BTI-induced Threshold Voltage Shift for Packaged SiC Power MOSFETs under Actual Switching Operation

Aoi Ueda

生駒 : 奈良先端科学技術大学院大学, 2021.3

Thesis / Diss.

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Volume No.

No. Printing year Location Call Number Material ID Circulation class Status Waiting

1

R016935

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Publication year

2021

Alternative title

SiCパワーMOSFETのスイッチング動作下におけるBTI起因しきい値電圧変動の測定

Series title

奈良先端科学技術大学院大学先端科学技術研究科修士論文 ; 2021/3/1

Note

学位記番号: 修第8460号

学位授与年月日: 2021/03/31

学位の種類: 修士(工学)

Country of publication

Japan

Title language

English (eng)

Language of texts

English (eng)

Author information

上田, 葵 (ウエダ, アオイ) [ Ueda, Aoi ]

Subject

Silicon carbide

Power MOSFET

Bias temperature instability

Reliability

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