Arvydas Kausas
生駒 : 奈良先端科学技術大学院大学, 2021.12
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The application of high-power high-energy laser systems in fundamental science vastly increasing with the development of these sources. Facilities around the globe are being developed in order to provide Peta-Watt (PW) class output. One of the components for PW laser is the Ti:sapphire amplifier system comprised of high energy nanosecond pump source. This pump source itself is made of amplifier system consisting of gain medium which could be designed in a shape of a rod, slab or thin disk.We suggest a new approach for the gain medium configuration to obtain joule level laser output. It consists of periodically bonded gain crystal and transparent heatsink with higher thermal conductivity value. By facing the gain directly with the heatsink, allows the heat generated to be extracted directly through it. Therefore, this approach is called Distributed Face Cooling (DFC). To make bonding between crystals strong and prone to optical damage, we implement Surface Activated Bonding (SAB) technology which was recently improved for laser materials for CW and pulsed operation.In the first part of the seminar, I will introduce our research work on designing high energy laser system and surface activated bonding technology, following the challenges and perspectives. In the second part, I will discuss my activity in prof. Taira group on research and development of compact size passively Q-switched solid-state microchip lasers and frequency conversion experiments.
2021
電子化映像資料(1時間15分38秒)
光ナノサイエンス特別講義 ; 2021年度
講演者所属: 自然科学研究機構
講演日: 2021年12月24日
講演場所: E318中講義室 物質
Japan
Japanese (jpn)
Japanese (jpn)
Arvydas , Kausas (アルヴィダス, カウシャス)