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Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation

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dc.contributor.author Felizco, Jenichi Clairvaux
dc.contributor.author Uenuma, Mutsunori
dc.contributor.author Ishikawa, Yasuaki
dc.contributor.author Uraoka, Yukiharu
dc.date.accessioned 2021-09-06T08:59:23Z
dc.date.available 2021-09-06T08:59:23Z
dc.date.issued 2020-10-15
dc.identifier.uri http://hdl.handle.net/10061/14437
dc.description.abstract The thermoelectric power factor of amorphous (a-IGZO), c-axis aligned crystalline (c-IGZO) and (cc-IGZO) crystal-embedded c-axis aligned crystalline InGaZnO were optimized by performing hydrogen incorporation via post-annealing. Highest power factor was achieved for a-IGZO when annealing with pure N2 was used, while adding 4% H2 in the N2 atmosphere significantly enhanced those of c-IGZO and cc-IGZO. However, the cc-IGZO samples displayed weaker properties compared to both a-IGZO and c-IGZO regardless of the annealing conditions. The presence of H2 was effective in passivating oxygen-related defects for both the c-IGZO and cc-IGZO samples, which translated to better electron transport while maintaining a respectable Seebeck coefficient. On the other hand, the formation of a high amount of oxygen vacancies from annealing with pure N2 was likely responsible not only for the good electrical conductivity of a-IGZO, but also for the relatively good Seebeck coefficients. Establishing the post-annealing conditions to maximize the thermoelectric properties depending on crystallinity paves the way for future commercial transparent IGZO thermoelectric devices. ja_JP
dc.language.iso en ja_JP
dc.publisher Elsevier ja_JP
dc.relation.isversionof https://www.sciencedirect.com/science/article/pii/S0169433220315488
dc.rights © 2020 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license(https://creativecommons.org/licenses/by-nc-nd/4.0/) 出版社許諾条件により、本文は2022年10月16日以降に公開 ja_JP
dc.title Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation ja_JP
dc.type.nii Journal Article ja_JP
dc.contributor.transcription ウエヌマ, ムツノリ
dc.contributor.transcription イシカワ, ヤスアキ
dc.contributor.transcription ウラオカ, ユキハル
dc.contributor.alternative 上沼, 睦典
dc.contributor.alternative 石河, 泰明
dc.contributor.alternative 浦岡, 行治
dc.textversion author ja_JP
dc.identifier.eissn 0169-4332
dc.identifier.jtitle Applied Surface Science ja_JP
dc.identifier.volume 527 ja_JP
dc.relation.doi 10.1016/j.apsusc.2020.146791 ja_JP
dc.identifier.artnum 146791 ja_JP
dc.identifier.NAIST-ID 73296014 ja_JP
dc.identifier.NAIST-ID 73293557 ja_JP
dc.identifier.NAIST-ID 73293219 ja_JP

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