DSpace Repository

Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation

Show simple item record

dc.contributor.author Felizco, Jenichi Clairvaux
dc.contributor.author Uenuma, Mutsunori
dc.contributor.author Ishikawa, Yasuaki
dc.contributor.author Uraoka, Yukiharu
dc.date.accessioned 2021-09-06T08:59:23Z
dc.date.available 2021-09-06T08:59:23Z
dc.date.issued 2020-10-15
dc.identifier.uri http://hdl.handle.net/10061/14437
dc.description.abstract The thermoelectric power factor of amorphous (a-IGZO), c-axis aligned crystalline (c-IGZO) and (cc-IGZO) crystal-embedded c-axis aligned crystalline InGaZnO were optimized by performing hydrogen incorporation via post-annealing. Highest power factor was achieved for a-IGZO when annealing with pure N2 was used, while adding 4% H2 in the N2 atmosphere significantly enhanced those of c-IGZO and cc-IGZO. However, the cc-IGZO samples displayed weaker properties compared to both a-IGZO and c-IGZO regardless of the annealing conditions. The presence of H2 was effective in passivating oxygen-related defects for both the c-IGZO and cc-IGZO samples, which translated to better electron transport while maintaining a respectable Seebeck coefficient. On the other hand, the formation of a high amount of oxygen vacancies from annealing with pure N2 was likely responsible not only for the good electrical conductivity of a-IGZO, but also for the relatively good Seebeck coefficients. Establishing the post-annealing conditions to maximize the thermoelectric properties depending on crystallinity paves the way for future commercial transparent IGZO thermoelectric devices. ja_JP
dc.language.iso en ja_JP
dc.publisher Elsevier ja_JP
dc.relation.isversionof https://www.sciencedirect.com/science/article/pii/S0169433220315488
dc.rights © 2020 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license(https://creativecommons.org/licenses/by-nc-nd/4.0/) 出版社許諾条件により、本文は2022年10月16日以降に公開 ja_JP
dc.title Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation ja_JP
dc.type.nii Journal Article ja_JP
dc.contributor.transcription ウエヌマ, ムツノリ
dc.contributor.transcription イシカワ, ヤスアキ
dc.contributor.transcription ウラオカ, ユキハル
dc.contributor.alternative 上沼, 睦典
dc.contributor.alternative 石河, 泰明
dc.contributor.alternative 浦岡, 行治
dc.textversion author ja_JP
dc.identifier.eissn 0169-4332
dc.identifier.jtitle Applied Surface Science ja_JP
dc.identifier.volume 527 ja_JP
dc.relation.doi 10.1016/j.apsusc.2020.146791 ja_JP
dc.identifier.artnum 146791 ja_JP
dc.identifier.NAIST-ID 73296014 ja_JP
dc.identifier.NAIST-ID 73293557 ja_JP
dc.identifier.NAIST-ID 73293219 ja_JP


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse

My Account