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Fabrication of low-dimensional microstructures with distyrylbenzene derivatives

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dc.contributor.author Akazawa, Tomoya en
dc.contributor.author Sasaki, Fumio en
dc.contributor.author Bando, Kazuki en
dc.contributor.author Mizuno, Hitoshi en
dc.contributor.author Katsuki, Hiroyuki en
dc.contributor.author Yanagi, Hisao en
dc.date.accessioned 2019-11-20T05:00:36Z en
dc.date.available 2019-11-20T05:00:36Z en
dc.date.issued 2019-10-17 en
dc.identifier.issn 1347-4065 en
dc.identifier.uri http://hdl.handle.net/10061/13414 en
dc.description.abstract Microneedle crystals of 1,4-bis-(4-methylstyryl)benzene (DSB-4Me) and amorphous microdots of bis (N,N-di-p-tolylamino-p-styryl)benzene (DADSB) are fabricated by using mask-shadowing and conventional vapor deposition techniques. By interaction between π-conjugated electronic chains and ionic lattice of a KCl crystal substrate, DSB-4Me molecules grow into needle crystals epitaxially orienting in four directions making ±60 against [110]KCl and [-110]KCl. As for DADSB, self-assembly into microdots by heating the KCl substrate at 180C during deposition is attributed to the impact of bulky peripheral groups in DADSB and surface migration of the deposited molecules. Moreover, while amplified spontaneous emission (ASE) is observed above an excitation threshold of 362 μJ/cm2 in the DSB-4Me microneedle crystals, a lower threshold whispering-gallery mode (WGM) lasing is observed above 37 μJ/cm2 for DADSB microdots owing to the higher waveguide quality. ja
dc.language.iso en en
dc.rights © 2019 The Japan Society of Applied Physics ja
dc.title Fabrication of low-dimensional microstructures with distyrylbenzene derivatives en
dc.type.nii Journal Article en
dc.contributor.transcription ミズノ, ヒトシ ja
dc.contributor.transcription カツキ, ヒロユキ ja
dc.contributor.transcription ヤナギ, ヒサオ ja
dc.contributor.alternative 水野, 斎 ja
dc.contributor.alternative 香月, 浩之 ja
dc.contributor.alternative 柳, 久雄 ja
dc.textversion author en
dc.identifier.jtitle Japanese Journal of Applied Physics en
dc.identifier.volume 59 en
dc.relation.doi 10.7567/1347-4065/ab4eca en
dc.identifier.NAIST-ID 83510024 en
dc.identifier.NAIST-ID 73298986 en
dc.identifier.NAIST-ID 73293383 en


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